The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Dec. 03, 2015
International Business Machines Corporation, Armonk, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Nicolas L. Breil, Mountain View, CA (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A first aspect of the invention provides for a transistor. The transistor may include a gate stack on a substrate; a channel under the gate stack within the substrate; a doped source and a doped drain on opposing sides of the channel, the doped source and the doped drain each including a dopant, wherein the dopant and the channel together have a first coefficient of diffusion and the doped source and the doped drain each have a second coefficient of diffusion; and a doped extension layer substantially separating each of the doped source and the doped drain from the channel, the doped extension layer having a third coefficient of diffusion, wherein the third coefficient of diffusion is greater than the first coefficient of diffusion.