The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Nov. 13, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Ruei Yeh, New Taipei, TW;

Chih-Lin Wang, Zhubei, TW;

Kang-Min Kuo, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/76829 (2013.01); H01L 29/401 (2013.01); H01L 29/42364 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a metal gate electrode structure over the semiconductor substrate. The semiconductor device structure includes an insulating layer over the semiconductor substrate and surrounding the metal gate electrode structure. The semiconductor device structure includes a first metal nitride layer over a first top surface of the metal gate electrode structure and in direct contact with the metal gate electrode structure. The first metal nitride layer includes a nitride material of the metal gate electrode structure.


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