The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Aug. 15, 2017
International Business Machines Corporation, Armonk, NY (US);
Sean D. Burns, Hopewell Junction, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Anuja E. DeSilva, Slingerlands, NY (US);
Nelson M. Felix, Briarcliff Manor, NY (US);
Sivananda K. Kanakasabapathy, Niskayuna, NY (US);
Yann A. M. Mignot, Slingerlands, NY (US);
Christopher J. Penny, Saratoga Springs, NY (US);
Roger A. Quon, Rhinebeck, NY (US);
Nicole A. Saulnier, Albany, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for forming conductive lines on a wafer comprises forming a first hardmask, a planarizing layer, a second hardmask, a layer of sacrificial mandrel material on the second hardmask, and patterning a mask on the layer of sacrificial material. A first sacrificial mandrel and a second sacrificial mandrel and a gap are formed. A layer of spacer material is deposited in the gap. Portions of the first sacrificial mandrel and the second sacrificial mandrel are removed, and exposed portions of the second hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. The second hardmask, the spacers, and the planarizing layer are removed. Exposed portions of the insulator layer are removed to form a trench in the insulator layer, and the trench is filled with a conductive material.