The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jan. 24, 2017
Globalfoundries Inc., Grand Cayman, KY;
Lei Sun, Albany, NY (US);
Xunyuan Zhang, Albany, NY (US);
Ruilong Xie, Schenectady, NY (US);
Yulu Chen, Troy, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Disclosed are methods of using a lithography-lithography-etch (LLE) technique to form a sidewall spacer pattern for patterning a target layer. In the methods, a photoresist layer is patterned by performing multiple lithographic processes with different photomasks, including a first photomask with a first pattern of parallel bars separated by spaces and a second photomask with a second pattern of opening(s) oriented in an essentially perpendicular direction as compared to the bar(s). The photoresist layer is then developed, creating a third pattern. The third pattern is transferred into a mandrel layer below to form mandrels of different lengths. Then, sidewall spacers are formed on the mandrels and the mandrels are selectively removed to form the sidewall spacer pattern. This sidewall spacer pattern is subsequently used in a sidewall image transfer (SIT) process to pattern a target layer below.