The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Nov. 26, 2013
Applicants:

Darrell G. Hill, Chandler, AZ (US);

Stephen H. Kilgore, Chandler, AZ (US);

Craig A. Gaw, Scottsdale, AZ (US);

Inventors:

Darrell G. Hill, Chandler, AZ (US);

Stephen H. Kilgore, Chandler, AZ (US);

Craig A. Gaw, Scottsdale, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract

An embodiment of a transistor includes a semiconductor substrate, spaced-apart source and drain electrodes coupled to the semiconductor substrate, a gate electrode coupled to the semiconductor substrate between the source and drain electrodes, a dielectric layer over the gate electrode and at least a portion of the semiconductor substrate, and a field plate structure over the dielectric layer, wherein the field plate structure includes a gold-containing material and one or more migration inhibiting materials.


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