The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jul. 25, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/31116 (2013.01); H01L 21/76804 (2013.01); H01L 21/76816 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor interconnect structure is formed as a via with an inverted-T shape to increase the reliability of the interface between the interconnect structure and an underlying electrically conductive, e.g., copper (Cu), layer of material. The inverted-T shape effectively increases a bottom critical dimension of the via, thereby reducing and/or eliminating via degradation of the interconnect structure caused by voids in the electrically conductive layer introduced during high-temperature or stress-migration baking.