The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Aug. 24, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Fu-Shou Tsai, Keelung, TW;
Yu-Ting Li, Chiayi, TW;
Li-Chieh Hsu, Taichung, TW;
Yi-Liang Liu, Tainan, TW;
Kun-Ju Li, Tainan, TW;
Po-Cheng Huang, Kaohsiung, TW;
Chien-Nan Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor structure includes following steps. A substrate is provided, and a semiconductor layer is formed on the substrate. Next, a SiN-rich pre-oxide layer is formed on the semiconductor layer. After forming the SiN-rich pre-oxide layer, an anneal treatment is performed to partially transfer the SiN-rich pre-oxide layer to form a SiN layer and a SiO layer. And the SiO layer is formed the on the SiN layer. Subsequently, a planarization process is performed to remove a portion of the SiO layer to expose the SiN layer.