The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Dec. 01, 2016
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/11524 (2017.01); H01L 27/11548 (2017.01); H01L 21/762 (2006.01); H01L 29/788 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/76224 (2013.01); H01L 27/11548 (2013.01); H01L 29/0649 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract
A method for fabricating a semiconductor device includes: forming a first trench and a wider second trench in a substrate and a material layer formed thereon, forming a flowable isolation material covering the material layer and filling in the first and second trenches, removing a portion of the flowable isolation material in the second trench so that the thickness of the remaining flowable isolation material on the sidewall of the second trench is 200 Å to 1000 Å, and forming a non-flowable isolation material on the flowable isolation material.