The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Nov. 28, 2014
Applicants:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Stmicroelectronics SA, Montrouge, FR;
Inventors:
Assignees:
Commissariat a l'energie atomique et aux energies alternatives, Paris, FR;
STMICROELECTRONICS SA, Montrouge, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02689 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/02686 (2013.01); H01L 21/26506 (2013.01); H01L 21/7624 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/1054 (2013.01); H01L 29/66742 (2013.01); H01L 29/66772 (2013.01); H01L 29/7847 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01);
Abstract
A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.