The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Oct. 20, 2015
Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); H01L 29/66 (2006.01); C23C 16/44 (2006.01); C23C 16/509 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/4401 (2013.01); C23C 16/458 (2013.01); C23C 16/4557 (2013.01); C23C 16/45565 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/5096 (2013.01); C23C 16/52 (2013.01); H01L 21/02315 (2013.01); H01L 21/8238 (2013.01); H01L 29/66477 (2013.01); H01L 29/665 (2013.01); H01L 29/6659 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a transistor on a substrate. Precursor gases are provided from a showerhead of a chemical vapor deposition (CVD) apparatus to form a contact etch stop layer (CESL) to cover the transistor and the substrate. A temperature of the showerhead is controlled in a range of about 70° C. to about 100° C. to control a temperature of the precursor gases.