The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Jun. 15, 2016
Applicant:

Ngk Insulators, Ltd., Nagoya-Shi, JP;

Inventors:

Morimichi Watanabe, Nagoya, JP;

Jun Yoshikawa, Nagoya, JP;

Tsutomu Nanataki, Nagoya, JP;

Katsuhiro Imai, Nagoya, JP;

Tomohiko Sugiyama, Nagoya, JP;

Takashi Yoshino, Nagoya, JP;

Yukihisa Takeuchi, Nagoya, JP;

Kei Sato, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/16 (2010.01); C30B 9/10 (2006.01); C30B 19/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/16 (2013.01); C30B 9/10 (2013.01); C30B 19/02 (2013.01); C30B 25/18 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02554 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02628 (2013.01); H01L 21/02631 (2013.01); H01L 33/0008 (2013.01); H01L 33/0025 (2013.01); H01L 33/0066 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/0075 (2013.01);
Abstract

Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.


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