The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Aug. 31, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventors:
Masanobu Shirakawa, Chigasaki Kanagawa, JP;
Takuya Futatsuyama, Yokohama Kanagawa, JP;
Kenichi Abe, Kawasaki Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/08 (2016.01); G06F 12/0811 (2016.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 11/56 (2006.01); G11C 8/08 (2006.01); G11C 29/02 (2006.01); G06F 12/0868 (2016.01); G11C 16/26 (2006.01); G11C 16/16 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0811 (2013.01); G06F 12/0868 (2013.01); G11C 8/08 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G06F 2212/283 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 2029/1202 (2013.01);
Abstract
A semiconductor memory device includes: a memory cell array including memory strings, one of the memory strings including memory cells; word lines commonly connected to the memory strings; and a controller configured to execute a write operation and a read operation on a page, the page being stored in memory cells connected to one of the word lines. The controller is configured to measure a cell current flowing in the memory string, and adjust a write voltage applied to a word line, based on a result of the cell current.