The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Jan. 19, 2016
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Shunsuke Kurita, Tokyo, JP;

Toru Kimura, Tokyo, JP;

Yoshio Takimoto, Tokyo, JP;

Kazunori Takanashi, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/32 (2006.01); G03F 7/20 (2006.01); G03F 7/075 (2006.01); G03F 7/004 (2006.01); H01L 21/311 (2006.01); C09K 13/00 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
G03F 7/32 (2013.01); G03F 7/0043 (2013.01); G03F 7/0757 (2013.01); G03F 7/20 (2013.01); C09K 13/00 (2013.01); H01L 21/3065 (2013.01); H01L 21/31122 (2013.01);
Abstract

A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.


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