The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Dec. 11, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yu-Hung Cheng, Tainan, TW;

Tung-I Lin, Tainan, TW;

Wei-Li Chen, Tainan, TW;

Yeur-Luen Tu, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14689 (2013.01);
Abstract

Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.


Find Patent Forward Citations

Loading…