The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Jan. 30, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jacklyn Chang, San Ramon, CA (US);

Kuoyuan (Peter) Hsu, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/105 (2006.01); G06F 17/50 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 17/5072 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/11226 (2013.01);
Abstract

A memory circuit includes a first active structure extending along a first direction, a second active structure extending along the first direction, a first conductive structure extending along a second direction, and a lowest via plug layer over the first conductive structure. The first active structure has a shared source portion corresponding to a source node of a first memory cell of the memory circuit and a source node of a second memory cell of the memory circuit. The second active structure has a shared source portion corresponding to a source node of a third memory cell of the memory circuit and a source node of a fourth memory cell of the memory circuit. The first conductive structure electrically connects the shared source portion of the first active structure with the shared source portion of the second active structure.


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