The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9887135 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 06, 2018

Filed:

Apr. 28, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jin Wallner, Albany, NY (US);

Haoren Zhuang, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/8234 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 21/3115 (2006.01); G03F 7/00 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823437 (2013.01); G03F 7/0002 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31155 (2013.01); H01L 21/32139 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01);
Abstract

A method includes forming a first mandrel layer above a first process layer. A first implant region is formed in the first mandrel layer. The first mandrel layer is patterned to define a plurality of first mandrel elements. At least a first subset of the first mandrel elements is formed from the first mandrel layer outside the first implant region and a second subset of the first mandrel elements is formed from the first implant region. First spacers are formed on sidewalls of the plurality of first mandrel elements. The first subset of the first mandrel elements are selectively removed without removing the second subset of the first mandrel elements. The first process layer is patterned using the first spacers and the second subset of the first mandrel elements as an etch mask.


Find Patent Forward Citations

Wallner, Jin. (2018). Methods for providing variable feature widths in a self-aligned spacer-mask patterning process (U.S. Patent No. 9887135). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9887135

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