The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jun. 06, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Holger Schulze, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 21/765 (2006.01); H01L 21/324 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/765 (2013.01); H01L 21/268 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/32 (2013.01); H01L 29/6634 (2013.01); H01L 29/66136 (2013.01); H01L 29/7396 (2013.01); H01L 29/861 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a field stop zone by irradiating a portion of a semiconductor body with a laser beam through a first surface of the semiconductor body. The portion has an oxygen concentration in a range of 5×10cmand 5×10cm. Then the semiconductor body is irradiated with protons through the first surface and annealed in a temperature range of 300° C. to 550° C.