The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Oct. 03, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chia-Cheng Ho, Hsin-Chu, TW;

Tzu-Chiang Chen, Hsin-Chu, TW;

Tsung-Lin Lee, Hsin-Chu, TW;

Wei-Jen Lai, Keelung, TW;

Chih Chieh Yeh, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32115 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/517 (2013.01);
Abstract

Methods of forming semiconductor devices and structures thereof are disclosed. In some embodiments, a semiconductor device includes a substrate that includes fins. Gates are disposed over the fins, the gates being substantially perpendicular to the fins. A source/drain region is disposed on each of fins between two of the gates. A contact is coupled to the source/drain region between the two of the gates. The source/drain region comprises a first width, and the contact comprises a second width. The second width is substantially the same as the first width.


Find Patent Forward Citations

Loading…