The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Mar. 31, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 29/78 (2006.01); H01L 21/3205 (2006.01); H01L 29/49 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4232 (2013.01); H01L 21/31111 (2013.01); H01L 21/32051 (2013.01); H01L 29/4975 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 21/28114 (2013.01); H01L 21/823456 (2013.01);
Abstract
Provided is a semiconductor device including a gate electrode, source and drain regions, and a spacer. The gate electrode is located over a substrate, and an angle of a base corner of the gate electrode is greater than 90 degrees. The source and drain regions are located in the substrate at sides of the gate electrode. The spacer is located at a sidewall of the gate electrode.