The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Apr. 27, 2015
Applicant:
Asm Genitech Korea Ltd., Cheonan, KR;
Inventors:
Woo Chan Kim, Daejeon, KR;
Jeong Ho Lee, Seoul, KR;
Sang-Jin Jeong, Cheonan, KR;
Hyun Soo Jang, Daejeon, KR;
Assignee:
ASM GENITECH KOREA LTD., Cheonan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); C23C 16/4558 (2013.01); C23C 16/45504 (2013.01); C23C 16/45548 (2013.01); C23C 16/45591 (2013.01);
Abstract
A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.