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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9877386 B1

PDFFull Text
Date of Patent:
Jan. 23, 2018

Filed:

Mar. 25, 2015

Substrate structure and method of manufacturing the same

Applicant:

Siliconware Precision Industries Co., Ltd., Taichung, TW;

Inventors:

Cheng-An Chang, Taichung, TW;

Sung-Huan Sun, Taichung, TW;

Chien-Hung Wu, Taichung, TW;

Yi-Cheih Chen, Taichung, TW;

Wen-Kai Liao, Taichung, TW;

Assignee:

Siliconware Precision Industries Co., Ltd., Taichung, TW;

Attorneys:

Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.

Peter F. Corless

Steven M. Jensen

Primary Examiner:

Jeremy C Norris

Int. Cl.
CPC ...
H05K 1/02 (2006.01); H05K 3/46 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0298 (2013.01); H01L 23/525 (2013.01); H01L 23/5226 (2013.01); H01L 24/02 (2013.01); H05K 3/46 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01);
Abstract

A substrate structure is provided, including: a carrier having at least a wiring area defined and positioned on a portion of a surface of the carrier; a first insulating layer formed on the wiring area; a wiring layer formed on the first insulating layer formed on the wiring area; and a second insulating layer formed on the wiring area. Therefore, a contact surface between the carrier and the first and second insulating layers is reduced by reducing the areas of the first and second insulating layers, whereby a substrate warpage due to mismatch of coefficients of thermal expansion (CTE) is avoided. The present invention further provides a method of manufacturing the substrate structure as described above.

Find Patent Forward Citations

Chang, Cheng-An. (2018). Substrate structure and method of manufacturing the same (U.S. Patent No. 9877386). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9877386

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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