The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Oct. 19, 2016
Applicant:

Siliconware Precision Industries Co., Ltd., Taichung, TW;

Inventors:

Meng-Tsung Lee, Taichung, TW;

Yi-Che Lai, Taichung, TW;

Shih-Kuang Chiu, Taichung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/498 (2013.01); H01L 23/49811 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 2224/13 (2013.01); H01L 2224/1401 (2013.01); H01L 2224/1412 (2013.01); H01L 2924/15788 (2013.01);
Abstract

A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield.


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