The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Dec. 28, 2015
Applicant:

Siliconware Precision Industries Co., Ltd., Taichung, TW;

Inventors:

Hsiao-Chun Huang, Taichung, TW;

Hsien-Wen Chen, Taichung, TW;

Shih-Ching Chen, Taichung, TW;

Guang-Hwa Ma, Taichung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); H01L 21/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 23/481 (2013.01); H01L 23/49811 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/83005 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19105 (2013.01);
Abstract

An electronic package is provided, which includes: a circuit structure having opposite first and second sides; at least an electronic element disposed on the first side of the circuit structure; an encapsulant formed on the first side of the circuit structure for encapsulating the electronic element; a dielectric layer formed on portions of the second side of the circuit structure; and a metal structure formed on the dielectric layer and the circuit structure. The metal structure has a first metal layer bonded to the circuit structure and a second metal layer formed on the first metal layer and the dielectric layer. Therefore, by replacing a conventional silicon interposer with the circuit structure, the invention eliminates the need to fabricate through silicon vias so as to greatly reduce the fabrication difficulty and cost. The invention further provides a method for fabricating the electronic package.


Find Patent Forward Citations

Loading…