Plasma processing apparatus and plasma processing method

Abstract

At a first timing after mounting a semiconductor wafer W on an electrostatic chuck, a susceptoris switched from an electrically grounded state into a floated state. From a second timing after the first timing, a second high frequency power HF for plasma generation is applied to the susceptor, and a processing gas is excited into plasma in a chamber. From a third timing after the second timing, a first high frequency power LF for ion attraction is applied to the susceptor, and a self-bias (−V) is generated. From a fourth timing close to the third timing, a negative second DC voltage −Bcorresponding to the self-bias (−V) is applied to the susceptor. From the fifth timing after the fourth timing, a positive first DC voltage Ais applied to an inner electrodeof the electrostatic chuck