The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Aug. 21, 2014
Dai Nippon Printing Co., Ltd., Tokyo-to, JP;
Takashi Adachi, Tokyo, JP;
Youichi Miura, Tokyo, JP;
Hideyoshi Takamizawa, Tokyo, JP;
Katsuya Hayano, Tokyo, JP;
Youhei Ohkawa, Tokyo, JP;
Hiroshi Watanabe, Agrate Brianza, IT;
Ayako Tani, Tokyo, JP;
Dai Nippon Printing Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a mask blank used to produce a halftone phase shift mask to which ArF excimer laser exposure light is to be applied. The present invention attains the object by providing the mask blank comprising a transparent substrate, and a light semitransmissive layer formed on the transparent substrate and made only of Si and N or a light semitransmissive layer formed on the transparent substrate and made only of Si, N and O, wherein the light semitransmissive layer has an extinction coefficient of 0.2 to 0.45 at a wavelength of ArF excimer laser exposure light, a refractive index of 2.3 to 2.7 at the wavelength of ArF excimer laser exposure light, and a transmittance of 15 to 38% at the wavelength of ArF excimer laser exposure light, and further has a layer thickness of 57 to 67 nm.