Enhanced charge storage materials, related semiconductor memory cells and semiconductor devices, and related systems and methods

Abstract

Volatile memory cells including dielectric materials exhibiting a nonlinear capacitance as a function of voltage. The volatile memory cells comprise a source region and a drain region within a substrate and a capacitor coupled to one of the source region and the drain region. The capacitor includes a charge storage material disposed between a pair of electrodes. The charge storage material has a crystal structure comprising an oxide of zirconium, hafnium, and bismuth, and is configured and formulated to transition from a first phase to a second phase exhibiting a higher capacitance than the first phase responsive to application of an electrical field. A digit line is electrically coupled to at least one electrode of the pair of electrodes and one of the source region and the drain region. Semiconductor devices and systems including the volatile memory cells and related methods of operating the volatile memory cells are also described.