The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Feb. 26, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Yu-Lien Huang, Hsinchu County, TW;
Chi-Kang Liu, Taipei, TW;
Yung-Ta Li, Kaohsiung, TW;
Chun-Hsiang Fan, Taoyuan County, TW;
Tung-Ying Lee, Hsinchu, TW;
Clement Hsing-Jen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A shallow trench isolation (STI) structure is formed on a substrate. Part of the STI structure is removed to form a first fin structure and a second fin structure extending above a support structure on the substrate. A first part of the STI structure is located between the first fin structure and the second fin structure and has a first top surface higher than an interface between the first fin structure and the support structure. A second part of the STI structure is located adjacent to the first fin structure and has a second top surface lower than the interface between the first fin structure and the support structure. An etching process is performed to remove part of the first fin structure and the second fin structure. Part of the support structure adjacent to the second part of the STI structure is removed during the etching process.