The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Mar. 21, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Duk Ju Na, Singapore, SG;

Chang Beom Yong, Singapore, SG;

Pandi C. Marimuthu, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/94 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 24/06 (2013.01); H01L 24/14 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/03009 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/11009 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10322 (2013.01); H01L 2924/10324 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/14335 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device includes a plurality of semiconductor die and a plurality of conductive vias formed in the semiconductor die. An insulating layer is formed over the semiconductor die while leaving the conductive vias exposed. An interconnect structure is formed over the insulating layer and conductive vias. The insulating layer is formed using electrografting or oxidation. An under bump metallization is formed over the conductive vias. A portion of the semiconductor die is removed to expose the conductive vias. The interconnect structure is formed over two or more of the conductive vias. A portion of the semiconductor die is removed to leave the conductive vias with a height greater than a height of the semiconductor die. A second insulating layer is formed over the first insulating layer. A portion of the second insulating layer is removed to expose the conductive via.


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