The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Nov. 22, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/225 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/8238 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 21/0228 (2013.01); H01L 21/2256 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/1037 (2013.01); H01L 29/6653 (2013.01); H01L 29/66492 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/7834 (2013.01); H01L 29/7851 (2013.01);
Abstract
Present disclosure provides a FinFET structure, including a plurality of fins, a gate, and a first dopant layer. The gate is disposed substantially orthogonal over the plurality of fins, covering a portion of a top surface and a portion of sidewalls of the plurality of fins. The first dopant layer covers the top surface and the sidewalls of a junction portion of a first fin, configured to provide dopants of a first conductive type to the junction portion of the first fin. The junction portion is adjacent to the gate.