The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Jan. 09, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yong-suk Tak, Seoul, KR;
Tae-jong Lee, Hwaseong-si, KR;
Hyun-seung Kim, Bucheon-si, KR;
Bon-young Koo, Suwon-si, KR;
Ki-yeon Park, Hwaseong-si, KR;
Gi-gwan Park, Hwaseong-si, KR;
Mi-seon Park, Daegu, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact plug on at least one source/drain region out of the pair of source/drain regions; and a multilayer-structured insulating spacer between the gate line and the contact plug. The multilayer-structured insulating spacer may include an oxide layer, a first carbon-containing insulating layer covering a first surface of the oxide layer adjacent to the gate line, and a second carbon-containing insulating layer covering a second surface of the oxide layer, opposite to the first surface of the oxide layer, adjacent to the contact plug.