The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Feb. 05, 2016
Infineon Technologies Ag, Neubiberg, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Wolfgang Jantscher, Villach, AT;
Roland Rupp, Lauf, DE;
Werner Schustereder, Villach, AT;
Hans Weber, Bayerisch Gmain, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor body having a semiconductor body material with a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon, at least one first semiconductor region doped with dopants of a first conductivity type and having a columnar shape that extends into the semiconductor body along an extension direction, wherein a respective width of the at least one first semiconductor region continuously increases along the extension direction; and at least one second semiconductor region included in the semiconductor body. The at least one second semiconductor region is arranged adjacent to the at least one first semiconductor region, and is doped with dopants of a second conductivity type complementary to the first conductivity type.