The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Dec. 02, 2016
United Microelectronics Corp., Hsinchu, TW;
Chia-Ching Hsu, Yunlin County, TW;
Liang Yi, Singapore, SG;
Shen-De Wang, Zhudong Township, TW;
Ko-Chi Chen, Taoyuan, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device includes an interconnection formed above a substrate, and the interconnection comprising interconnect layers respectively buried in dielectric layers; a lower conducting layer formed above the substrate; a memory cell structure formed on the lower conducting layer and buried in one of the dielectric layers; an upper conducting layer formed on the memory cell structure. The memory cell structure includes a bottom electrode formed on and electrically connected to the lower conducting layer; a transitional metal oxide (TMO) layer formed on the bottom electrode; and a top electrode formed on the TMO layer, wherein the upper conducting layer is formed on the top electrode and electrically connected to the top electrode. Also, the lower conducting layer and the upper conducting layer are positioned in the different dielectric layers.