The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
May. 09, 2014
International Business Machines Corporation, Armonk, NY (US);
Tadanobu Inoue, Tokyo, JP;
David O. Melville, Yorktown Heights, NY (US);
Alan E. Rosenbluth, Yorktown Heights, NY (US);
Masaharu Sakamoto, Tokyo, JP;
Kehan Tian, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A system and method for optimizing (designing) a mask pattern, in which SMO and OPC are collaboratively used to exert a sufficient collaborative effect or are appropriately used in different manners. The method for designing a source and a mask for lithography includes a step (S) of selecting a set of patterns; a step of performing source mask optimization (SMO) using the set of patterns, under an optical proximity correction (OPC) restriction rule which is used for selectively restricting shifting of an edge position of a polygon when OPC is applied to the set of patterns; and a step (S, S) of determining a layout of the mask for lithography, by applying OPC to all patterns constituting the mask for lithography using the source optimized through the SMO.