The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Aug. 25, 2015
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Shawn George Thomas, Chesterfield, MO (US);
Qingmin Liu, Glen Carbon, IL (US);
SunEdison Semiconductor Limited (UEN201334164H), Singapore, SG;
Abstract
A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm; a silicon dioxide layer on the surface of the semiconductor handle substrate; a carbon-doped amorphous silicon layer in contact with the silicon dioxide layer; a dielectric layer in contact with the carbon-doped amorphous silicon layer; and a semiconductor device layer in contact with the dielectric layer.