The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Dec. 15, 2016
Applicant:
Powertech Technology Inc., Hsinchu County, TW;
Inventor:
Wen-Jeng Fan, Hsinchu County, TW;
Assignee:
POWERTECH TECHNOLOGY INC., Hsinchu County, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/48 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48227 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/06593 (2013.01);
Abstract
A semiconductor device includes a first chip, a spacer, and a second chip. The first chip and the spacer are disposed on a substrate. The second chip has a first half end portion disposed on a first half end portion of the first chip, and a second half end portion disposed on the spacer. The height of the spacer is substantially equal to the height of the first chip.