The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Jan. 03, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chin-Shen Lin, Taipei, TW;

Min-Yuan Tsai, Hsinchu, TW;

Kuo-Nan Yang, Hsinchu, TW;

Chung-Hsing Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/5226 (2013.01);
Abstract

Power grids of an IC are provided. A power grid includes first power traces disposed in a first metal layer and parallel to a first direction, second power traces disposed in a second metal layer and parallel to a second direction that is perpendicular to the first direction, and third power traces disposed in the first metal layer parallel to the first direction. The first power traces arranged in the same straight line are separated from each other by a plurality of first gaps. The third power traces arranged in the same straight line are separated from each other by a plurality of second gaps. Each first gap is surrounded by the two adjacent third power traces. Each second gap is surrounded by the two adjacent first power traces. The first power traces are coupled to the third power traces via the second power traces.


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