The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Jul. 07, 2016
Ho-jin Lee, Seoul, KR;
Byung Lyul Park, Seoul, KR;
Kwangjin Moon, Hwaseong-si, KR;
Jisoon Park, Suwon-si, KR;
Jin Ho an, Seoul, KR;
Ho-Jin Lee, Seoul, KR;
Byung Lyul Park, Seoul, KR;
Kwangjin Moon, Hwaseong-si, KR;
Jisoon Park, Suwon-si, KR;
Jin Ho An, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view.