The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

May. 27, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Li-Hsien Huang, Zhubei, TW;

Yung-Shou Cheng, Dou-liu, TW;

Yan-Fu Lin, Zhubei, TW;

An-Jhih Su, Bade, TW;

Wei-Cheng Wu, Hsin-Chu, TW;

Chin-Hsien Chen, New Taipei, TW;

Hsien-Wei Chen, Hsin-Chu, TW;

Der-Chyang Yeh, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 21/78 (2013.01); H01L 22/32 (2013.01);
Abstract

Methods of testing, manufacturing, and packaging semiconductor devices are disclosed. In some embodiments, a method of testing a semiconductor device includes providing an integrated circuit die having contacts disposed thereon, forming an insulating material over the integrated circuit die and the contacts, and forming an opening in the insulating material over the contacts. A eutectic material is formed in the openings over the contacts, and the integrated circuit die is electrically tested by contacting the eutectic material disposed over the contacts. The eutectic material is removed.


Find Patent Forward Citations

Loading…