The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Jun. 08, 2016
International Business Machines Corporation, Armonk, NY (US);
Sean D. Burns, Hopewell Junction, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Matthew E. Colburn, Schenectady, NY (US);
Sivananda K. Kanakasabapathy, Niskayuna, NY (US);
Yann A. M. Mignot, Slingerlands, NY (US);
Christopher J. Penny, Saratoga Springs, NY (US);
Roger A. Quon, Rhinebeck, NY (US);
Nicole Saulnier, Albany, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for forming conductive lines on a wafer comprises forming a first sacrificial mandrel and a second sacrificial mandrel. Spacers are formed adjacent to the first and second sacrificial mandrels. A filler material is deposited on the second hardmask. A first mask is formed on a portion of the second sacrificial mandrel. A first cavity and a second cavity are formed that expose portions of the second hardmask, and exposed portions of the second mask and exposed portions of the filler material are removed to expose portions of the first hardmask. Exposed portions of the first hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. Exposed portions of the insulator layer are removed to form a trench in the insulator layer and the trench is filled with a conductive material.