The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Aug. 18, 2016
Qualcomm Incorporated, San Diego, CA (US);
Sinan Goktepeli, San Diego, CA (US);
Plamen Vassilev Kolev, San Diego, CA (US);
Michael Andrew Stuber, Rancho Santa Fe, CA (US);
Richard Hammond, San Diego, CA (US);
Shiqun Gu, San Diego, CA (US);
Steve Fanelli, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.