The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2017

Filed:

Oct. 21, 2014
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Patrick Reilly, Dublin, CA (US);

Harald te Nijenhuis, San Jose, CA (US);

Nerissa Draeger, Fremont, CA (US);

Bart J. van Schravendijk, Palo Alto, CA (US);

Nicholas Muga Ndiege, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/02 (2013.01); C23C 16/401 (2013.01); C23C 16/452 (2013.01); C23C 16/45512 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01L 21/02164 (2013.01); H01L 21/02315 (2013.01); H01L 21/67207 (2013.01); H01L 21/76224 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76831 (2013.01); H01L 21/76837 (2013.01);
Abstract

Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided.


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