The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Feb. 03, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Kamal M. Karda, Boise, ID (US);
F. Daniel Gealy, Kuna, ID (US);
D. V. Nirmal Ramaswamy, Boise, ID (US);
Chandra V. Mouli, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 11/56 (2006.01); H01L 27/11507 (2017.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5657 (2013.01); G11C 11/221 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); H01L 27/11507 (2013.01); H01L 43/02 (2013.01);
Abstract
Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.