The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Jul. 25, 2013
Infineon Technologies Austria Ag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Wolfgang Scholz, Olching, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a semiconductor portion with a main FET and a control circuit. The main FET includes a gate electrode to control a current flow through a body zone between a source zone and a drift zone. The control circuit receives a local drift zone potential of the main FET cell and outputs an output signal indicating when the local drift zone potential exceeds a preset threshold. The control circuit may turn down or switch off the main FET and/or may output an overcurrent indication signal when the local drift zone potential exceeds the preset threshold.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile