The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Aug. 25, 2016
Kabushiki Kaisha Toshiba, Tokyo, JP;
Hiroaki Katou, Nonoichi Ishikawa, JP;
Toshifumi Nishiguchi, Hakusan Ishikawa, JP;
Saya Shimomura, Komatsu Ishikawa, JP;
Akio Suzuki, Nonoichi Ishikawa, JP;
Kentaro Ichinoseki, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a layer having first and second surfaces, a first region including central and peripheral portions, and a second region on the first region. First trenches extend into the first surface and terminate within the first region in the central portion. Each first trench includes a first electrode and a gate electrode over the first electrode. The first and gate electrodes are spaced from the first and second regions by a first insulating layer. A second trench extends into the first surface and terminates within the first region in the peripheral portion. The second trench includes a second electrode and a third electrode over the second electrode. The second and third electrodes are spaced from the first and second regions by a second insulating layer. A fourth electrode overlies the first insulating layer in the central portion and the second insulating layer in the peripheral portion.