The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Feb. 03, 2017
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Anton Mauder, Kolbermoor, DE;
Reinhard Ploss, Unterhaching, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/324 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/2225 (2013.01); H01L 21/2251 (2013.01); H01L 21/28079 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/3247 (2013.01); H01L 29/1079 (2013.01); H01L 29/167 (2013.01); H01L 29/41741 (2013.01); H01L 29/4958 (2013.01); H01L 29/66348 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a first trench in a semiconductor substrate from a first side, forming a semiconductor layer adjoining the semiconductor substrate at the first side, the semiconductor layer capping the first trench at the first side, and forming a contact at a second side of the semiconductor substrate opposite to the first side.