The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Aug. 28, 2015
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for manufacturing a bonded wafer using a base wafer which is an epitaxial wafer produced by a method including at least one of: (1) setting a chamfer width of a wafer for epitaxial growth to be 0.20 mm or less on an epitaxial growth side; (2) preparing a wafer for epitaxial growth having a rise shape on an epitaxial growth side periphery, thereby adjusting the wafer to have an amount of sag within a range of −30 nm/mmto +10 nm/mmon a bonding surface side periphery; and (3) adjusting epitaxial growth conditions so a change in amount of sag before and after growth becomes a positive value, thereby adjusting the wafer to have sag within a range of −30 nm/mmto +10 nm/mm. The method can manufacture a bonded wafer with a small terrace width even when an epitaxial wafer is used as the base wafer.