The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2017

Filed:

Nov. 07, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Che-Wei Chang, Taoyuan, TW;

Chun-Hsiung Wang, Kaosiung, TW;

Chih-Wei Chen, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 29/0653 (2013.01); H01L 29/66681 (2013.01); H01L 29/66795 (2013.01); H01L 29/7816 (2013.01);
Abstract

A semiconductor device includes: a gate structure on a substrate; a first doped region adjacent to one side of the gate structure; a second doped region adjacent to another side of the gate structure; and fin-shaped structures on the substrate. Preferably, a number of the fin-shaped structures covered by the gate structure is different from a number of the fin-shaped structures overlapping the first doped region or the second doped region.


Find Patent Forward Citations

Loading…