The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jul. 01, 2014
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Shin-Jiun Kuang, Hsinchu, TW;
Tsung-Hsing Yu, Taipei, TW;
Yi-Ming Sheu, Hsinchu, TW;
Chun-Yi Lee, Hsinchu County, TW;
Chia-Wen Liu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure provide a semiconductor structure, including a substrate and a regrowth region. The substrate is made of a first material with a first lattice constant, and the regrowth region is made of the first material and a second material, having a lattice constant different from the first lattice constant. The regrowth region is partially positioned in the substrate. The regrowth region has a 'tip depth' measured vertically from a surface of the substrate to a widest vertex of the regrowth region, and the tip depth being less than 10 nm. The regrowth region further includes a top layer substantially made of the first material, and the top layer has substantially the first lattice constant.