The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Aug. 05, 2016
Infineon Technologies Dresden Gmbh, Dresden, DE;
Kurt Sorschag, Villach-Landskron, AT;
Daniel Sarlette, Radebeul, DE;
Felix Braun, Dresden, DE;
Marcel Heller, Helmsdorf, DE;
Dieter Kaiser, Dresden, DE;
Ingo Meusel, Dresden, DE;
Marko Lemke, Dresden, DE;
Anton Mauder, Kolbermoor, DE;
Helmut Strack, Munich, DE;
Infineon Technologies Dresden GmbH, Dresden, DE;
Abstract
A method for forming a semiconductor device includes providing a semiconductor substrate having an upper side and comprising, in a vertical cross-section substantially orthogonal to the upper side, a plurality of semiconductor mesas of a first monocrystalline semiconductor material which are spaced apart from each other by sacrificial layers selectively etchable with respect to the first monocrystalline semiconductor material and arranged in trenches extending from the upper side into the semiconductor substrate, forming on the semiconductor mesas a support structure mechanically connecting the semiconductor mesas, at least partly replacing the sacrificial layers while the semiconductor mesas remain mechanically connected via the support structure, and at least partly removing the support structure.