The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Jul. 12, 2012
Kensuke Inai, Nirasaki, JP;
Kazuya Dobashi, Nirasaki, JP;
Kensuke Inai, Nirasaki, JP;
Kazuya Dobashi, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film, so that a depositattached to a surface of the natural oxide filmis slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying filmis supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit